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igbt highspeedigbtintrenchandfieldstoptechnology IGB30N60H3 600vhighspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 highspeedigbtintrenchandfieldstoptechnology features: trenchstop tm technologyoffering ?verylowturn-offenergy ?lowv cesat ?lowemi ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating,halogen-freemouldcompound,rohs compliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGB30N60H3 600v 30a 1.95v 175c g30h603 pg-to263-3 g c e g e c
3 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e g e c
4 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 maximumratings parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 60.0 30.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 120.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 120.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c powerdissipation t c =100c p tot 187.0 94.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, reflow soldering (msl1 according to jedec j-sta-020) 260 c thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.80 k/w thermal resistance, min. footprint junction - ambient r th(j-a) 65 k/w thermal resistance, 6cm2 cu on pcb junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =2.00ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =30.0a t vj =25c t vj =125c t vj =175c - - - 1.95 2.30 2.50 2.40 - - v gate-emitter threshold voltage v ge(th) i c =0.43ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 2000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30.0a - 16.0 - s g c e g e c
5 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1630 - output capacitance c oes - 107 - reverse transfer capacitance c res - 50 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =30.0a, v ge =15v - 165.0 - nc short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 160 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 18 - ns rise time t r - 22 - ns turn-off delay time t d(off) - 207 - ns fall time t f - 22 - ns turn-on energy e on - 0.73 - mj turn-off energy e off - 0.44 - mj total switching energy e ts - 1.17 - mj t vj =25c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g =10.5 w , l s =95nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (ikw30n60h3) reverse recovery. switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 18 - ns rise time t r - 22 - ns turn-off delay time t d(off) - 239 - ns fall time t f - 23 - ns turn-on energy e on - 0.95 - mj turn-off energy e off - 0.60 - mj total switching energy e ts - 1.55 - mj t vj =175c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g =10.5 w , l s =95nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (ikw30n60h3) reverse recovery. g c e g e c
6 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =400v, v ge =15/0v, r g =10,5 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 10 20 30 40 50 60 70 80 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 g c e g e c
7 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c =15a i c =30a i c =60a g c e g e c
8 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =10,5 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 5 10 15 20 25 30 35 40 45 50 55 60 10 100 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =30a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 3 8 13 18 23 28 33 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =15/0v, i c =30a, r g =10,5 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.43ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. g c e g e c
9 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =10,5 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 5 10 15 20 25 30 35 40 45 50 55 60 0 1 2 3 4 5 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =30a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 3 8 13 18 23 28 33 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =15/0v, i c =30a, r g =10,5 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =30a, r g =10,5 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 e off e on e ts g c e g e c
10 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 17. typicalgatecharge ( i c =30a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 80 130 180 230 280 330 380 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 3 6 9 12 15 g c e g e c
11 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.05279329 6.5e-5 2 0.1938242 4.7e-4 3 0.2577884 6.1e-3 4 0.2956575 0.06477749 g c e g e c
12 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 pg-to263-3
13 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 pg-to263-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
14 IGB30N60H3 highspeedswitchingseriesthirdgeneration rev.2.3,2014-03-11 revisionhistory IGB30N60H3 revision:2014-03-11,rev.2.3 previous revision revision date subjects (major changes since last revision) 1.1 2010-07-26 preliminary datasheet 2.1 2013-12-09 new value ices max limit at 175c 2.2 2014-02-26 without pb free logo 2.3 2014-03-11 max ratings vce, tvj 3 25c welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 pg-to263-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3

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